Observation of electron–hole puddles in graphene using a scanning single-electron transistor

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Observation of electron–hole puddles in graphene using a scanning single-electron transistor

The electronic structure of graphene causes its charge carriers to behave like relativistic particles. For a perfect graphene sheet free from impurities and disorder, the Fermi energy lies at the so-called ‘Dirac point’, where the density of electronic states vanishes. But in the inevitable presence of disorder, theory predicts that equally probable regions of electron-rich and hole-rich puddle...

متن کامل

Tunable graphene single electron transistor.

We report electronic transport experiments on a graphene single electron transistor. The device consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions. It is electrostatically tunable by three lateral graphene gates and an additional back gate. The tunneling coupling is a strongly nonmonotonic function of gate voltage indicating the presence...

متن کامل

Modeling and Simulation of a Molecular Single-Electron Transistor

In this paper, to understand the concept of coupling, molecule density of states that coupled to the metal electrodes will be explained then, based on this concept, a weak and strong coupling for the molecules attached to the metal electrodes will be described. Capacitance model is used to explore the connection of addition energy with the Electron affinity and the ionization energy of the mole...

متن کامل

Magnetic polaron formation in graphene-based single-electron transistor

Rights: © 2014 Wiley-Blackwell. This is the accepted version of the following article: Savin, Hele & Kuivalainen, P. & Novikov, S. & Lebedeva, N. 2014. Magnetic polaron formation in graphene-based single-electron transistor. Physica Status Solidi B. Volume 251, Issue 4. 1-15. DOI: 10.1002/pssb.201350295, which has been published in final form at http://onlinelibrary.wiley.com/doi/10.1002/pssb.2...

متن کامل

A graphene-based hot electron transistor.

We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call graphene base transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Nature Physics

سال: 2007

ISSN: 1745-2473,1745-2481

DOI: 10.1038/nphys781